IMT41K512M8DA-107:P – DDR3L SDRAM
IMT41K512M8DA belongs to a class of low powered DDR3L SDRAM (1.35V), which in turn is a low voltage version of the DDR3 (1.5V) SDRAM offered by Micron Technology. In this blog post, we are going to uncover the true potential offered by these low powered memory chipsets which could be used in versatile Industrial, Medical and Commercial applications. A particular part number mentioned in subject of this blog post refers to DDR3 SDRAM’s family hence, description here forth will cover the broader aspects of entire family which will also be true and apply to our particular SDRAM case here. These SDRAMs have employed several new technologies for high-speed operation while inheriting the DDR2 SDRAM architecture. DDR3 SDRAM achieves high-speed operation about twice of that of DDR2 SDRAM, but suppresses the increase in power consumption by using a voltage of 1.35 and 1.5 V for the power supply and interface. These RAMs got eight banks, which allows more efficient bank interleave access than that in the case of four banks and employs the 8-bit prefetch architecture for high-speed operation. The bus width of the DRAM core has been made eight times wider than the I/O bus width, which enables the operating frequency of the DRAM core to be 1/8 of the data rate of the I/O interface section. The READ operation converts 8-bit data read in parallel from the DRAM core to serial data, and outputs it from the I/O pin in synchronization with the clock while a WRITE operation converts serial data that is input from the I/O pin in synchronization with the clock to parallel data, and writes it to the DRAM core as 8-bit data. Because of these features, the burst length is basically eight bits, but 4-bit burst length is also supported considering the legacy architectures. Moreover, the DDR3 SDRAM has employed the RESET pin newly. The RESET pin is driven low during power-on or initialization process or when a reset is required.
Multi Facet Features
- Application-Specific Tuning. Extensive collaboration with global customers to develop in-depth understanding of application use cases and deliver application specific SDRAMs.
- Ruggedized Products. Enhancements in their memory chipsets that enable consistent performance across extreme environments: extended temperature, thermal cycling, shock, humidity, etc.
- High Reliability. Design and testing processes that add a high level of endurance and reliability to align with needs of long-lifecycle embedded applications.
- Extensive Quality Testing. Rigorous testing to deliver the consistent performance across products and processes necessary in embedded and mission-critical applications.
- Product Longevity. Extended lifecycle support through Product Longevity Program, which goes a step beyond standard lifecycle support to suit long-life applications.
- Security by Design. Integrating the latest Micron Authenta™ technology solution in memory to provide platform and solution-level values that translate to reliable, safety-conscious solutions with best-in-class time to market.
Wide Spread Applications. Micron’s memory Chipsets are the top choice across the tech horizons and multi market applications like factory automation, surveillance, M2M, retail, digital signage, smart grid, transportation/fleet management, healthcare, aerospace and defense applications.
Very energetic article, I liked that a lot. Will there be a part 2?