FDMS8622 Onsemi

FDMS8622 Onsemi Transistor OVERVIEW

The FDMS8622 is a cutting-edge N-Channel MOSFET designed for robust performance in various applications. Whether you’re building power supplies, motor control circuits, or other electronic systems, the FDMS8622 delivers exceptional efficiency and reliability.

Specifications:

1.  Advanced Power Trench® Technology: The FDMS8622 is crafted using an optimized process that ensures low on-resistance (rDS(on)), efficient switching, and ruggedness. This technology translates to better overall performance.
2. High Voltage Capability: With a drain-to-source voltage (Vdss) of 100 V, the FDMS8622 can handle demanding tasks in industrial and automotive applications.
3. Current Ratings:
     • Continuous Drain Current (Id) at 25°C: 4.8A (Ta), 16.5A (Tc)
     • Maximum Gate-Source Voltage (Vgs) Threshold: 4V at 250µA
4. Low On-Resistance: At 10V gate-source voltage, the FDMS8622 exhibits an impressive 56mΩ on-resistance.
5. Gate Charge: The gate charge (Qg) is 7nC at 10V gate-source voltage.
6. Power Dissipation: The FDMS8622 can handle up to 2.5W (Ta)= 25 °C or 31W (Tc)= 25 °C power dissipation.
7. Operating Temperature Range: From -55°C to +150°C making it suitable for various environments.

For more information, please visit Onsemi.

FengYun Electronics have got 6000 pieces of the FDMS8622 in stock. We are also having a versatile collection of electronic components, offered at the lowest prices.

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